5SDD1060F0001 3BHL001863P0001 | ABB IGCT thyristor

Description

IGCT is in the same vein as SCR in the rectification process, SCR is the abbreviation of Silicon Controlled Rectifier. Thyristors have one-way, two-way, turn-off and light control several types. It has the advantages of small size, light weight, high efficiency, long life, easy control and so on. It is widely used in controlled rectifier, voltage regulation, inverter and contactless switch and other automatic control and high-power power conversion occasions. Unidirectional thyristor is a kind of controlled rectifier electronic component, which can be turned off from off to on under the action of external control signal, but once it is turned on, The external signal cannot be turned off, and it can only be turned off by removing the load or reducing the voltage at both ends. Unidirectional thyristor is a four-layer, three-terminal semiconductor device composed of three PN junction PNPN. Compared with the diode with one PN junction, unidirectional thyristor is controlled by the control electrode current. Compared with a triode with two PN junctions, the difference is that the thyristor has no amplification effect on the control electrode current. Bidirectional thyristor has the characteristics of turning on and off in two directions. Bidirectional thyristor is essentially two anti-parallel unidirectional thyristor, which is a semiconductor device composed of four PN structures formed by NPNPN five layers of semiconductors and has three electrodes. Because the structure of the main electrode is symmetrical (all from the N layer), its electrodes are not called anode and cathode like unidirectional thyristors, but the first electrode A1 that is very close to the control is called the second electrode A2. The main disadvantage of bidirectional thyristors is the low ability to withstand the voltage rise rate. This is because when the bidirectional thyristor is switched on in one direction, the carriers in each layer of the silicon wafer have not returned to the position of the cutoff state, and corresponding protection measures must be taken. Bidirectional thyristor components are mainly used in AC control circuits, such as temperature control, light control, explosion-proof AC switches and DC motor speed regulation and commutation circuits. The thyristor is always in the open state above the maintenance current, the turn-off current is high, the control is difficult, and the turn-off speed is slow. In the inverter link, SCR has excellent performance in LCI (load commutated inverter), which can achieve large power, high voltage and large current. Diode (uncontrolled rectifier device) and SCR (semi-controllable) rectifier do not require PMW to meet the two-quadrant inverter work, PWM requires IGBT (full control) and other devices.

Diode is the use of single pilot connectivity. The thyristor is two triodes and is also single conductive. igbt is a mosfet plus a triode. All three are semiconductor devices, and all use pn section single channel. The diode is the basis of all three. It is the platform for semiconductor materials to show its brilliance for the first time, but it is not controllable, and the so-called uncontrollable is that when there is a current flowing, it cannot be turned off or turned on artificially, all depending on its own nature. The scr(thyristor, thyristor) can be semi-controlled, that is, it can be controlled through an input signal, but it can not be turned off. igbt is a fully controlled device that can be switched on and off. This is the control aspect. The diode covers a wide range, high and low voltage can be, high voltage diode is also called power diode, the scientific name is referred to as gtr. scr and igbt are basically high pressure. scr can also be fully controlled by combination arrangement to form gto(gate switchable thyristor). The shadow of these three devices can be seen in the major inverters, choppers, and rectifiers. 1, thyristor medium frequency power supply is thyristor, we often say KGPS. The advantages of this kind of power supply is mature technology, reliable quality, cheap, the disadvantage is that the electrical efficiency is lower than IGBT medium frequency power supply 10%-20%, and the harmonics of the rectification part have an impact on the user's power grid system, serious damage to other equipment in the power grid. 2. IGBT medium frequency power supply, this kind of power supply in the domestic development cycle is not long, the advantage is high electrical efficiency, generally up to more than 90%, so it is more than thyristor power saving 10%-20%, the impact on the grid is very small, the disadvantage is: The technology maturity is relatively low, the price is higher than the thyristor, but from the long-term power saving effect to buy IGBT power is still quite cost-effective, because you can save electricity a year to buy one or two such equipment.

IGBT The IGCT combines the high-speed switching characteristics of the IGBT (insulated gate bipolar transistor) with the high blocking voltage and low on-loss characteristics of the GTO (gate off thyristor), and the trigger signal is generally transmitted to the IGCT unit through the optical fiber. In the phase module of the ACS6000 marginal rectifier unit, each phase module consists of an IGCT and a continuing diode, a clamp capacitor, and a damping resistor, and is provided with energy by an independent gate power supply unit GUSP. IGBT module is only a part of the power device package as a module, IGBT module products can generally be single tube, double tube (half bridge) or 6 tube (full bridge), there are also three levels of 12 just package as a module. Because it has been packaged as a module, it is electrically insulated and the installation process is simple; IGCT does not have this advantage, which makes the design, installation and maintenance of the system complicated, and the contradiction between insulation and heat dissipation makes the system more problematic. IGBT low power drive can be done together, high power requires a separate drive board. dsp is the control core, as well as external io, internal signal acquisition, processing, drive signal buffering, drive signal isolation, amplification, in order to reach the GE pole of IGBT. Optical fiber isolated transmission drive signal. The IGBT on-off frequency is high, but dv/dt is the on-off speed is low, there is a certain contradiction, only the speed is fast enough, the frequency can be high enough. Plus the absorption circuit or IGBT to take soft off, the absorption circuit is the possible 10kv/us absorption, soft off refers to reduce the switch off speed, artificially caused off the tail, the benefit is to reduce dv/dt, the harm is to increase the IGBT loss, so to carefully adjust the off time. When the IGBT driver circuit turns off the IGBT, a negative voltage is applied at GE (positive voltage is applied on), and a micro resistor is placed at the micro capacitor, so that the GE voltage drops slowly, thereby reducing dv/dt. Common IGBT parameters: 6500V/ Max 750A; 4500V/ 1200A;  3300V/ 1500A;  1700V/3600A;  1200V/ 3600A. 700V and 2500V are rarely used. There are many below 600V, which we won't discuss here. Above 380V, IGBT voltage should be above 1200V. Although there are 6600 and 6000V motors, 6500V IGBT is not suitable for 6500V, the price is high, a 20,000 or so, and the two-level output voltage of 3300V, the maximum is only 750A pipe, the output dv/dt is too large, the three-level output voltage of 4160V, 4160 in domestic applications are few. The use of a five-level 4500V tube can output 6600V, so the 6500 tube is not used.

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