3BHE023784R0001 5SHY3545L0014 | ABB IGCT Module

Description

Features:

– High-quality and original product, ensuring reliability and durability.

– Advanced design and technology for efficient performance.

– Compact size and easy installation for convenience.

– Robust construction for long-lasting use.

– Excellent heat dissipation capabilities for enhanced safety.

– Low power losses and high switching speed for improved efficiency.

– Integrated protection features for increased reliability.

– Compatibility with different control systems for versatile applications.

Benefits:

– Enhanced system performance and efficiency.

– Reduced power losses and improved energy savings.

– Increased system reliability and durability.

– Easy integration into various applications.

– Compact size saves space and allows flexible installation.

– Provides advanced protection against overvoltage and overcurrent conditions.

– Enables precise control and operation of electrical systems.

IGCT integrated Gate Commutated Thyristors (IGCT integrated gate commutated thyristors = gate commutated thyristors + gate units) is a new type of power semiconductor switching device developed by medium voltage inverter for use in large power electronics packages. It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets. IGCT integrates the GTO chip with the anti-parallel diode and gate drive circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, and gives play to the performance of the thyristor in the on-stage, and presents the characteristics of the transistor in the off-stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on, and has a good application prospect. IGCT has been used in power system grid devices (100MVA) and medium power industrial drive devices (5MW) IGCT has been successfully applied in the field of medium voltage inverter for 11 years (until 2009), because the high-speed switching capability of IGCT does not need buffer circuits, so the number of power components required is less, and the reliability of operation is greatly increased.Insulated Gate Bipolar Transistor (IGBT), It is a composite voltage-driven power electronic device composed of BJT(bipolar triode) and MOS(insulated gate type field effect tube), which has the advantages of high input impedance of MOSFET and low on-voltage drop of GTR. The driving power is small and the saturation pressure is reduced. The diode is added between the collector and the emitter, mainly for continuous flow, and due to the inductive load, the IGBT turn-off moment will produce a very high self-inductive reverse voltage at both ends of the IGBT, which may breakdown the IGBT. The parallel diode shorted out this "self-inducted inverting voltage", protecting the IGBT.

The IGCT combines the high-speed switching characteristics of the IGBT (insulated gate bipolar transistor) with the high blocking voltage and low on-loss characteristics of the GTO (gate off thyristor), and the trigger signal is generally transmitted to the IGCT unit through the optical fiber. In the phase module of the ACS6000 marginal rectifier unit, each phase module consists of an IGCT and a continuing diode, a clamp capacitor, and a damping resistor, and is provided with energy by an independent gate power supply unit GUSP. IGBT module is only a part of the power device package as a module, IGBT module products can generally be single tube, double tube (half bridge) or 6 tube (full bridge), there are also three levels of 12 just package as a module. Because it has been packaged as a module, it is electrically insulated and the installation process is simple; IGCT does not have this advantage, which makes the design, installation and maintenance of the system complicated, and the contradiction between insulation and heat dissipation makes the system more problematic.

IGBT low power drive can be done together, high power requires a separate drive board. dsp is the control core, as well as external io, internal signal acquisition, processing, drive signal buffering, drive signal isolation, amplification, in order to reach the GE pole of IGBT. Optical fiber isolated transmission drive signal. The IGBT on-off frequency is high, but dv/dt is the on-off speed is low, there is a certain contradiction, only the speed is fast enough, the frequency can be high enough. Plus the absorption circuit or IGBT to take soft off, the absorption circuit is the possible 10kv/us absorption, soft off refers to reduce the switch off speed, artificially caused off the tail, the benefit is to reduce dv/dt, the harm is to increase the IGBT loss, so to carefully adjust the off time. When the IGBT driver circuit turns off the IGBT, a negative voltage is applied at GE (positive voltage is applied on), and a micro resistor is placed at the micro capacitor, so that the GE voltage drops slowly, thereby reducing dv/dt. Common IGBT parameters: 6500V/ Max 750A; 4500V/ 1200A;  3300V/ 1500A;  1700V/3600A;  1200V/ 3600A. 700V and 2500V are rarely used. There are many below 600V, which we won't discuss here. Above 380V, IGBT voltage should be above 1200V. Although there are 6600 and 6000V motors, 6500V IGBT is not suitable for 6500V, the price is high, a 20,000 or so, and the two-level output voltage of 3300V, the maximum is only 750A pipe, the output dv/dt is too large, the three-level output voltage of 4160V, 4160 in domestic applications are few. The use of a five-level 4500V tube can output 6600V, so the 6500 tube is not used.

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