5STP18H4200 | ABB Phase Control Thyristor

Description

General Information

• Product ID:5STP18H4200
  
• ABB Type Designation:2075A 4200V
  
• Catalog Description:Phase Control Thyristor, PCT
• Frame Size:Spare_Parts
  
• Gross Volume:0.271 dm³
  
• Gross Weight:0.89 kg
  
• Invoice Description:Phase Control Thyristor, PCT
• Minimum Order Quantity:1 piece
  
• Order Multiple:1 piece
  
• Package Level 1 Depth / Length:102 mm
  
• Package Level 1 Gross Weight:0.89 kg
  
• Package Level 1 Height:26 mm
  
• Package Level 1 Units:1 piece
  
• Package Level 1 Width:102 mm
  
• Part Type:New
  
• Product Name:Control System Accessory
  
• Product Net Depth / Length:102 mm
  
• Product Net Height:26 mm
  
• Product Net Weight:0.89 kg
  
• Product Net Width:102 mm
  
• Product Type:Control_System_Accessory
  
• Quote Only:No
• Technical Information:Phase Control Thyristor, PCT
  2075A 4200V Mounting force = 50kN
  
  Patented free-floating silicon technology
  Low on-state and switching losses
  Designed for traction, energy and industrial applications
  Optimum power handling capability
  Interdigitated amplifying gate

Features, Applications Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Symbol VDSM, VRSM VDRM, VRRM VRSM dV/dtcrit Parameter Symbol Conditions IDSM IRSM VDSM, Tvj = 125°C VRSM, Tvj = 125°C Forward leakage current Reverse leakage current VDRM/ VRRM are equal to VDSM/ VRSM values up to Tvj = 110°C Symbol Conditions FM a Device unclamped Device clamped Air strike distance 14 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Parameter Average on-state current RMS on-state current Peak non-repetitive surge current Limiting load integral Peak non-repetitive surge current Limiting load integral Symbol Conditions IT(AV)M IT(RMS) ITSM I2t ITSM = 10 ms, Tvj = 125 °C, = 8.3 ms, Tvj = 125 °C, 0 V Half sine wave, = 70°C Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Symbol Conditions di/dtcrit Tvj = 125 °C, ITRM VD 0.67 VDRM, IFG 0.5 µs Cont. 50 Hz Cont. = 1Hz Parameter Recovery charge Gate turn-on delay time Parameter Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Average gate power loss Symbol Conditions VFGM IFGM VRGM PG(AV) Symbol Conditions VGT IGT VGD IGD Tvj 25 °C Tvj 0.4 x VDRM, Tvjmax 0.4 x VDRM, Tvjmax = 125°C Parameter Gate-trigger voltage Gate-trigger current Gate non-trigger voltage Gate non-trigger current Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h)

IGCT integrated Gate Commutated Thyristors (IGCT integrated gate commutated thyristors = gate commutated thyristors + gate units) is a new type of power semiconductor switching device developed by medium voltage inverter for use in large power electronics packages. It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets. IGCT integrates the GTO chip with the anti-parallel diode and gate drive circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, and gives play to the performance of the thyristor in the on-stage, and presents the characteristics of the transistor in the off-stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on, and has a good application prospect. IGCT has been used in power system grid devices (100MVA) and medium power industrial drive devices (5MW) IGCT has been successfully applied in the field of medium voltage inverter for 11 years (until 2009), because the high-speed switching capability of IGCT does not need buffer circuits, so the number of power components required is less, and the reliability of operation is greatly increased. Insulated Gate Bipolar Transistor (IGBT), It is a composite voltage-driven power electronic device composed of BJT(bipolar triode) and MOS(insulated gate type field effect tube), which has the advantages of high input impedance of MOSFET and low on-voltage drop of GTR. The driving power is small and the saturation pressure is reduced. The diode is added between the collector and the emitter, mainly for continuous flow, and due to the inductive load, the IGBT turn-off moment will produce a very high self-inductive reverse voltage at both ends of the IGBT, which may breakdown the IGBT. The parallel diode shorted out this "self-inducted inverting voltage", protecting the IGBT.

The company focuses on DCS, PLC, robot, large servo four systems

The main products are various modules/cards, controllers, touch screens, servo drivers Company advantage: Supply imported original products, professional production of spare parts One year warranty, fast delivery time, complete supply !！！ ① 24 hours email response (12 hours); ② For shipment outside Asia, please contact the seller.

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