Description
IGCT integrated Gate Commutated Thyristors (IGCT integrated gate commutated thyristors = gate commutated thyristors + gate units) is a new type of power semiconductor switching device developed by medium voltage inverter for use in large power electronics packages. It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets. IGCT integrates the GTO chip with the anti-parallel diode and gate drive circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, and gives play to the performance of the thyristor in the on-stage, and presents the characteristics of the transistor in the off-stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on, and has a good application prospect. IGCT has been used in power system grid devices (100MVA) and medium power industrial drive devices (5MW) IGCT has been successfully applied in the field of medium voltage inverter for 11 years (until 2009), because the high-speed switching capability of IGCT does not need buffer circuits, so the number of power components required is less, and the reliability of operation is greatly increased.
Insulated Gate Bipolar Transistor (IGBT), It is a composite voltage-driven power electronic device composed of BJT(bipolar triode) and MOS(insulated gate type field effect tube), which has the advantages of high input impedance of MOSFET and low on-voltage drop of GTR. The driving power is small and the saturation pressure is reduced. The diode is added between the collector and the emitter, mainly for continuous flow, and due to the inductive load, the IGBT turn-off moment will produce a very high self-inductive reverse voltage at both ends of the IGBT, which may breakdown the IGBT. The parallel diode shorted out this "self-inducted inverting voltage", protecting the IGBT.
Silicon Controlled Rectifier (SCR) is a high-power electrical component, also known as a thyristor. It has the advantages of small size, high efficiency and long life. In the automatic control system, it can be used as a high-power driving device to realize the control of high-power equipment with low-power control. It has been widely used in AC and DC motor speed control system, power regulation system and servo system. Thyristors are divided into two kinds: unidirectional thyristors and bidirectional thyristors. Bidirectional thyristor is also called TRIAC, or TRIAC for short. The bidirectional thyristor is structurally equivalent to two unidirectional thyristors in reverse connection, and this thyristor has a dual pilot pass function. Its on-off state is determined by the control pole G. Adding a positive pulse (or negative pulse) to the control pole G can make it forward (or reverse) conduction. The advantage of this device is that the control circuit is simple and there is no reverse voltage problem, so it is particularly suitable for AC contactless switch use. P1N1P2N2 four-layer three-terminal device with silicon single crystal as the basic material began in 1957, because its characteristics are similar to vacuum thyristor, so it is known internationally as silicon thyristor, referred to as thyristor T, and because the thyristor was originally in static rectification, it is also known as silicon controllable rectifier element, referred to as thyristor SCR. In terms of performance, thyristor not only has unidirectional conductivity, but also has more valuable controllability than silicon rectifier elements (commonly known as "dead silicon "). It only has two states: on and off. SCR can control high-power electromechanical equipment with milliampere-level current, if the power exceeds this, due to the significant increase in component switching loss, the average current phase allowed to pass is reduced, at this time, the nominal current should be degraded. Thyristor has many advantages, such as: to control high power with small power, power amplification up to hundreds of thousands of times; The response is extremely fast, opening and closing in microseconds; No contact operation, no spark, no noise; High efficiency, low cost and so on. The weakness of thyristor: static and dynamic overload capacity is poor; Easily misled by interference. Thyristor from the appearance of the main classification: bolt shape, flat plate shape and bottom shape.
1, IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss, etc., and causes low cost, high yield, and has a good application prospect. 2, compared with IGBT, IGCT was put on the market later, the application is not as wide as IGBT, and the technology maturity is not as good as IGBT. The current IGBT and IGCT open and close losses are similar, and the efficiency of the inverter is not different. The main advantage is that the voltage withstand of IGCT is currently higher than that of IGBT, and the device is reduced when applied to high voltage inverters. However, the current wind power converters are 690V, and the voltage withstand of IGBT is enough. IGBT and IGCT, which is the development direction of power electronic devices? At present, the academic community is arguing that although IGCT appeared late, at least for now, it is not clear what advantages it has over IGBT. However, it is also possible that with the development of technology, the two will go hand in hand, or both will be replaced by some new device. The counterpart to IGCT is IEGT, also known as press-mounted IGBT (PPI). Injection Enhanced Gate Transistor (IEGT) is a series of IGBT power electronic devices with a voltage resistance of more than 4KV. By adopting the structure of enhanced injection, the low-pass state voltage is realized, which makes the large-capacity power electronic devices achieve rapid development. IEGT has a potential development prospect as a MOS series power electronic device, with low loss, high-speed action, high voltage, intelligent active gate drive and other characteristics, as well as the use of groove structure and multi-chip parallel and self-balancing characteristics, so it has great potential in further expanding the current capacity. In addition, many derivative products can be provided through module packaging, which is expected in large and medium capacity converter applications. Developed by Toshiba in Japan, IEGT takes advantage of the "electron injection enhancement effect", giving it the advantages of both IGBT and GTO: low saturation voltage drop, wide safe working area (absorption loop capacity is only about 1/10 of the GTO), low gate drive power (two orders of magnitude lower than the GTO), and higher operating frequency. The device adopts plate crimped electrode extraction structure, which has high reliability and performance has reached 4.5KV/1500A level.
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