Description
Description：Incremental Encoder, 2.5" Diameter, Solid Shaft, Standard Square Flange, 10 mm Diameter Shaft with Flat, 8-30 V DC, 8-30V Line Driver (HTL), Radial Exit, MS 7-Pin w/ Mating Connector, B leads A, CW, Z gated with BN, 1024 PPR
Features • Blind or through-shaft designs • Integral flex mount • PPR of 00001 to 65536 • 50.8 mm (2 in.) diameter housing
A gate driver is a power amplifier that accepts low-power input from the controller IC and generates an appropriate high-current gate drive for the power device. With the increasing demand for power electronic devices, the design and performance of gate driver circuits are becoming more and more important. Power semiconductor devices are the core of modern power electronic systems. These systems utilize many gated semiconductor devices such as common transistors, FETs, BJTS, MOSFETs, IGBTs, etc., as switching elements in switched mode power supplies (SMPS), general purpose power supplies (UPS), and motor drivers. Modern technological developments in power electronics usually follow the development of power semiconductor devices. Power level requirements and switching frequencies are increasing in the power electronics industry. Metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs) are two of the most popular and efficient semiconductor devices for medium to high power switching power supplies in most applications. The gate of a MOSFET or IGBT is the electrically isolated control terminal for each device. The other terminals of these devices are the source and drain or the emitter and collector. In order to operate a MOSFET/IGBT, it is usually necessary to apply a voltage to the gate relative to the device source/emitter. In order to drive these switching devices on, the gate terminals must be set to positive with respect to their source/emitter. The switching behavior of power devices is affected by parasitic capacitance between the three terminals, namely, gate to source (CGS), gate to drain (CGD), and drain-source to source (CDS), which is usually non-linear and a function of the bias voltage. Charging the gate capacitor causes the power device to be on and allows current to flow between its drain and source extremes, while when discharged, it shuts down the device and blocks large voltages at the drain and source extremes. The gate voltage of a power device does not increase unless its gate input capacitor is charged and the power device reaches the gate threshold voltage (V thousand) at its gate voltage. A fifth-generation kilopower device is defined as the minimum gate bias required to create an on-path between its source and drain regions. For operating a power device as a switch, a voltage sufficient to be greater than V kilowatts should be applied between the gate and source/emitter terminals.
The company focuses on DCS, PLC, robot, large servo four systems
The main products are various modules/cards, controllers, touch screens, servo drivers
Company advantage: Supply imported original products, professional production of spare parts
One year warranty, fast delivery time, complete supply !！！
① 24 hours email response (12 hours);
② For shipment outside Asia, please contact the seller.
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