Description
General Information
- Product ID:HIEE405246R0002
- Catalog Description:UNS 0867A-P,V2:Extension Card I/O
- Product Net Depth / Length:23 mm
- Product Net Height:37 mm
- Product Net Weight:0.22 kg
- Product Net Width:165 mm
- Product Type:Undefined
Power unit board 1. Unit power supply board Board function: Take power from the DC bus of the power unit and output 24V DC power for the unit control board. Board interface: Input interface: power unit positive and negative DC bus Output interface: 24VDC output, connected to the unit control board 2. Unit control panel Plate function: 1) Receive the signal of the main control system and provide the control signal to the drive board; 2) Perform real-time fault monitoring and report fault information to the main control system; 3)3) Supply power to the unit drive board. Board interface: 1) Optical fiber interface for communication with the main control system; 2)24V power input interface: connected with the power board; 3) Driver signal (Top1, Top2, Lock interface: connected with the driver board; 4)15V power output interface: connected with the driver board to supply power to the driver board; 5) Overvoltage, undervoltage detection interface: connected with the positive and negative bus of the unit; 6) Lack of phase detection interface: fuse auxiliary switch; 7) overheating detection interface: connected to the temperature detection switch; 8) Power on thyristor drive signal interface: Connect the thyristor gate; 9) By-pass thyristor driver signal interface: connected to the by-pass thyristor gate; 10) Bypass OK signal detection interface: connected to bypass OK board. 3. Unit drive board Function of the board: receive the control signal of the unit control board, provide driving signal for the four-way IGBT on the unit, and monitor the drive fault and report it to the unit control board. Board interface: 1)15V power input interface: connected to the unit control board; 2) Input signal (Top1, Top2, /Lock) : connected to the unit control board; 3) Output signal (ERRout) : connected to the unit control board; 4) Output signal (TOP1, BOT1, TOP2, BOT2 IGBT driver signal) : connected to the C, G, E pole of TOP1, BOT1, TOP2, BOT2 IGBT respectively. 4. Bypass OK board Board function: After the unit control board sends out the side communication number, the by-pass loop is detected to detect the signal input to the unit control board. Board interface: Input interface: bypass thyristor A, K pole; Output interface: connected to the unit control board
IGCT integrated Gate Commutated Thyristors (IGCT integrated gate commutated thyristors = gate commutated thyristors + gate units) is a new type of power semiconductor switching device developed by medium voltage inverter for use in large power electronics packages. It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets. IGCT integrates the GTO chip with the anti-parallel diode and gate drive circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, and gives play to the performance of the thyristor in the on-stage, and presents the characteristics of the transistor in the off-stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on, and has a good application prospect. IGCT has been used in power system grid devices (100MVA) and medium power industrial drive devices (5MW) IGCT has been successfully applied in the field of medium voltage inverter for 11 years (until 2009), because the high-speed switching capability of IGCT does not need buffer circuits, so the number of power components required is less, and the reliability of operation is greatly increased.
Insulated Gate Bipolar Transistor (IGBT), It is a composite voltage-driven power electronic device composed of BJT(bipolar triode) and MOS(insulated gate type field effect tube), which has the advantages of high input impedance of MOSFET and low on-voltage drop of GTR. The driving power is small and the saturation pressure is reduced. The diode is added between the collector and the emitter, mainly for continuous flow, and due to the inductive load, the IGBT turn-off moment will produce a very high self-inductive reverse voltage at both ends of the IGBT, which may breakdown the IGBT. The parallel diode shorted out this "self-inducted inverting voltage", protecting the IGBT.
The company focuses on DCS, PLC, robot, large servo four systems
The main products are various modules/cards, controllers, touch screens, servo drivers Company advantage: Supply imported original products, professional production of spare parts One year warranty, fast delivery time, complete supply !！！ ① 24 hours email response (12 hours); ② For shipment outside Asia, please contact the seller.
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