Description
General Information
- Product ID:3BSE007836R1
- ABB Type Designation:DSTY W121
- Catalog Description:DSTY W121 Voltage Transformer Unit
- Long Description:Voltage Transformer Unit
Note! This part is exempted from the scope of 2011/65/EU (RoHS)
as provided in Article 2(4)(c), (e), (f) and (j) therein
(ref.: 3BSE088609 – EU DECLARATION OF CONFORMITY
- ABB Advant Master Process Control System)
Dimensions
- Product Net Depth / Length:225 mm
- Product Net Height:31.5 mm
- Product Net Width:121.5 mm
- Product Net Weight:0.48 kg
The gate circuit of IGCT contains a large number of ics and resistance capacitors, especially a large number of electrolytic capacitors, which are designed to provide a large turn-off current and make it have a certain life limit. Moreover, this capacitor is not replaceable and must be replaced together with the entire device, resulting in increased maintenance costs. If the device fails, for the IGBT system, generally replace the driver circuit or IGBT, the price is less than 1500 yuan, and the conventional voltage IGBT and its driver circuit in the mainland market agents, generally have in stock; For the IGCT system, the entire IGCT must be replaced, the replacement is generally more than 20,000 yuan, and there are only a few domestic agents, due to the large occupation of funds, generally no spot, so once there is a failure, the maintenance cycle is long, the cost is high, and because of the complexity of the device, the maintenance technicians are very demanding. After the warranty period is often at the mercy of others. In circuit design, IGBT only needs a small and relatively simple buffer circuit, sometimes even omit the buffer circuit; In addition to the voltage buffer circuit, IGCT must also have a current buffer circuit to suppress the secondary breakdown when it is turned off, which is more complex than IGBT. The current IGBT and IGCT open and close losses are similar, and the efficiency of the inverter is not different. The main advantage is that the voltage withstand of IGCT is currently higher than that of IGBT, and the device is reduced when applied to high voltage inverters. However, the current wind power converters are 690V, and the voltage withstand of IGBT is enough. IGCT used to have the advantage of large current, convenient series application, 4500V/4000A is very common, now it is slowly caught up with IGBT, IGBT has 4500V/1200A, can be parallel, not convenient series, IGCT disadvantages are that the switching frequency can not be too high, the waveform is not as good as IGBT, large loss, large harmonics, higher algorithm requirements. The price is expensive. IGCT is used in large current applications, such as steel rolling environment, 3300V, tens of thousands of kw power, three-level IGCT inverter (Siemens SM150) gives the best control performance.
1, IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss, etc., and causes low cost, high yield, and has a good application prospect. 2, compared with IGBT, IGCT was put on the market later, the application is not as wide as IGBT, and the technology maturity is not as good as IGBT. The current IGBT and IGCT open and close losses are similar, and the efficiency of the inverter is not different. The main advantage is that the voltage withstand of IGCT is currently higher than that of IGBT, and the device is reduced when applied to high voltage inverters. However, the current wind power converters are 690V, and the voltage withstand of IGBT is enough. IGBT and IGCT, which is the development direction of power electronic devices? At present, the academic community is arguing that although IGCT appeared late, at least for now, it is not clear what advantages it has over IGBT. However, it is also possible that with the development of technology, the two will go hand in hand, or both will be replaced by some new device. The counterpart to IGCT is IEGT, also known as press-mounted IGBT (PPI). Injection Enhanced Gate Transistor (IEGT) is a series of IGBT power electronic devices with a voltage resistance of more than 4KV. By adopting the structure of enhanced injection, the low-pass state voltage is realized, which makes the large-capacity power electronic devices achieve rapid development. IEGT has a potential development prospect as a MOS series power electronic device, with low loss, high-speed action, high voltage, intelligent active gate drive and other characteristics, as well as the use of groove structure and multi-chip parallel and self-balancing characteristics, so it has great potential in further expanding the current capacity. In addition, many derivative products can be provided through module packaging, which is expected in large and medium capacity converter applications. Developed by Toshiba in Japan, IEGT takes advantage of the "electron injection enhancement effect", giving it the advantages of both IGBT and GTO: low saturation voltage drop, wide safe working area (absorption loop capacity is only about 1/10 of the GTO), low gate drive power (two orders of magnitude lower than the GTO), and higher operating frequency. The device adopts plate crimped electrode extraction structure, which has high reliability and performance has reached 4.5KV/1500A level.
The company focuses on DCS, PLC, robot, large servo four systems
The main products are various modules/cards, controllers, touch screens, servo drivers Company advantage: Supply imported original products, professional production of spare parts One year warranty, fast delivery time, complete supply !！！ ① 24 hours email response (12 hours); ② For shipment outside Asia, please contact the seller.
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