Description
800 Amp, Matched Set of SGCT Thyristors for PowerFlex 700 Drive
Our PowerFlex® 700 AC Drives are available in a wide range of horsepower ratings. These drives control three-phase induction motors in applications with requirements ranging from the simplest speed control to the most demanding torque control. The PowerFlex 700 drives offers application-specific features and parameters for lifting, oil wells, and speed and positioning applications.
IGCT integrated Gate Commutated Thyristors (Intergrated Gate Commutated Thyristors), which is the integration of the GTO chip with the anti-parallel diode and gate driver circuit, and then the gate driver is connected in a low inductance mode at the periphery. This is the GTO (Gate Turn Off).
IGCT integrated Gate Commutated Thyristors (IGCT integrated gate commutated thyristors = gate commutated thyristors + gate units) is a new type of power semiconductor switching device developed by medium voltage inverter for use in large power electronics packages. It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets. IGCT integrates the GTO chip with the anti-parallel diode and gate drive circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, and gives play to the performance of the thyristor in the on-stage, and presents the characteristics of the transistor in the off-stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on, and has a good application prospect. IGCT has been used in power system grid devices (100MVA) and medium power industrial drive devices (5MW) IGCT has been successfully applied in the field of medium voltage inverter for 11 years (until 2009), because the high-speed switching capability of IGCT does not need buffer circuits, so the number of power components required is less, and the reliability of operation is greatly increased.
Insulated Gate Bipolar Transistor (IGBT), It is a composite voltage-driven power electronic device composed of BJT(bipolar triode) and MOS(insulated gate type field effect tube), which has the advantages of high input impedance of MOSFET and low on-voltage drop of GTR. The driving power is small and the saturation pressure is reduced. The diode is added between the collector and the emitter, mainly for continuous flow, and due to the inductive load, the IGBT turn-off moment will produce a very high self-inductive reverse voltage at both ends of the IGBT, which may breakdown the IGBT. The parallel diode shorted out this "self-inducted inverting voltage", protecting the IGBT.
The company focuses on DCS, PLC, robot, large servo four systems
The main products are various modules/cards, controllers, touch screens, servo drivers
Company advantage: Supply imported original products, professional production of spare parts
One year warranty, fast delivery time, complete supply !！！
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Main brands include: ABB, Bailey, GE, FOXBORO, Invensys TRICONEX, Bentley BENTLY, A-B Rockwell, EMERSON EMERSON, B&R, MOTOROLA, FUANC, REXROTH, KUKA, HONEYWELL, NI, DEIF, Yokogawa, WOODWARD WOODWARD, Ryan, SCHNEIDER SCHNEIDER, Yaskawa, MOOG, EPRO, PROSOFT and other major brands
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