Description
Basic Structure of IGCT IGCT is developed based on the GTO (Gate Turn - Off Thyristor). It integrates the GTO chip with an anti - parallel diode and a gate drive circuit, and then connects to its gate driver in a low - inductance way at the periphery. Inside the IGCT chip, there are multiple cells, and each cell has an independent gate, anode, and cathode structure. Conduction Principle When a forward voltage is applied between the anode and cathode of the IGCT and there is a suitable forward trigger signal on the gate, the IGCT starts to conduct. At this time, the gate signal causes electrons in the gate region to be injected into the base region, forming an initial conductive path. As electrons are injected, the PN junction between the anode and cathode is forward - biased. A large number of carriers (electrons and holes) flow between the anode and cathode, causing the IGCT to enter the conduction state. In the conduction state, the IGCT exhibits the characteristics of a thyristor, that is, it has a low on - state voltage drop and can pass a large current. This gives it the advantage of low losses in high - power applications.
Turn - off Principle
When it is necessary to turn off the IGCT, a reverse gate voltage is applied to the gate.
The reverse gate voltage quickly extracts electrons from the gate region, causing the gate current to drop rapidly. As the gate current decreases, the anode current also begins to decrease.
At this time, the carrier recombination process inside the IGCT accelerates, and the current between the anode and cathode gradually decreases until the IGCT is finally turned off. During the turn - off process, the IGCT exhibits the characteristics of a transistor, being able to quickly cut off the current and avoiding the trailing current phenomenon that may occur in traditional thyristors during turn - off. This reduces turn - off losses and switching time.
Functions of Buffer Layer and Transparent Emitter Technology
Buffer Layer Technology
A buffer layer is adopted in the structure of the IGCT, which can effectively suppress the voltage rise rate (dv/dt) during the turn - off process. When the IGCT is turned off, carriers in the buffer layer can absorb a portion of the energy, slowing down the voltage rise speed. This reduces the stress on the device and the circuit, improving the reliability and switching performance of the device.
Transparent Emitter Technology
Through a special process, the anode emitter is made transparent, allowing holes injected during conduction to reach the cathode more effectively. This improves the carrier transport efficiency, further reducing the on - state voltage drop and
conduction losses.
Function of the Gate Drive Circuit
The gate drive circuit is crucial for the normal operation of the IGCT. It not only needs to provide sufficient forward trigger voltage and current to turn on the IGCT but also be able to quickly apply a reverse gate voltage to turn it off. At the same time, the gate drive circuit needs to have low - inductance characteristics to reduce energy losses and interference during the transmission of the gate signal, ensuring that the IGCT can operate accurately and reliably.
Main brands include: ABB, Bailey, GE, FOXBORO, Invensys TRICONEX, Bentley BENTLY, A-B Rockwell, EMERSON EMERSON, B&R, MOTOROLA, FUANC, REXROTH, KUKA, HONEYWELL, NI, DEIF, Yokogawa, WOODWARD WOODWARD, Ryan, SCHNEIDER SCHNEIDER, Yaskawa, MOOG, EPRO, PROSOFT and other major brands
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