5SHY3545L0016 GVC736BE101 ABB Integrated Gate Module

Description

ABB 5SHY3545L0016 GVC736BE101

IGCT integrated Gate Commutated Thyristors (Intergrated Gate Commutated Thyristors), which is the integration of the GTO chip with the anti-parallel diode and gate driver circuit, and then the gate driver is connected in a low inductance mode at the periphery. This is the GTO (Gate Turn Off).

IGCT is in the same vein as SCR in the rectification process, SCR is the abbreviation of Silicon Controlled Rectifier. Thyristors have one-way, two-way, turn-off and light control several types. It has the advantages of small size, light weight, high efficiency, long life, easy control, etc., and is widely used in various automatic control and high-power electric energy conversion occasions such as controlled rectification, voltage regulation, inverter and contactless switch.

Unidirectional thyristor is a controlled rectifier electronic component that can be turned off by an external control signal, but once it is turned on, the external signal cannot be turned off, and it can only be turned off by removing the load or reducing the voltage at both ends. Unidirectional thyristor is a four-layer, three-terminal semiconductor device composed of three PN junction PNPN. Compared with the diode with one PN junction, unidirectional thyristor is controlled by the control electrode current. Compared with a triode with two PN junctions, the difference is that the thyristor has no amplification effect on the control electrode current. Bidirectional thyristor has the characteristics of turning on and off in two directions. Bidirectional thyristor is essentially two anti-parallel unidirectional thyristor, which is a semiconductor device composed of four PN structures formed by NPNPN five layers of semiconductors and has three electrodes. Because the structure of the main electrode is symmetrical (all from the N layer), its electrodes are not called anode and cathode like unidirectional thyristors, but the first electrode A1 that is very close to the control is called the second electrode A2. The main disadvantage of bidirectional thyristors is the low ability to withstand the voltage rise rate. This is because when the bidirectional thyristor is switched on in one direction, the carriers in each layer of the silicon wafer have not returned to the position of the cutoff state, and corresponding protection measures must be taken. Bidirectional thyristor components are mainly used in AC control circuits, such as temperature control, light control, explosion-proof AC switches and DC motor speed regulation and commutation circuits. The thyristor is always in the open state above the maintenance current, the turn-off current is high, the control is difficult, and the turn-off speed is slow. In the inverter link, SCR has excellent performance in LCI (load commutated inverter), which can achieve large power, high voltage and large current. Diode (uncontrolled rectifier device) and SCR (semi-controllable) rectifier do not require PMW to meet the two-quadrant inverter work, PWM requires IGBT (full control) and other devices.

IGCT integrated Gate Commutated Thyristors (IGCT integrated gate commutated thyristors = gate commutated thyristors + gate units) is a new type of power semiconductor switching device developed by medium voltage inverter for use in large power electronics packages. It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets. IGCT integrates the GTO chip with the anti-parallel diode and gate drive circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, and gives play to the performance of the thyristor in the on-stage, and presents the characteristics of the transistor in the off-stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on, and has a good application prospect. IGCT has been used in power system grid devices (100MVA) and medium power industrial drive devices (5MW) IGCT has been successfully applied in the field of medium voltage inverter for 11 years (until 2009), because the high-speed switching capability of IGCT does not need buffer circuits, so the number of power components required is less, and the reliability of operation is greatly increased.

Insulated Gate Bipolar Transistor (IGBT), It is a composite voltage-driven power electronic device composed of BJT(bipolar triode) and MOS(insulated gate type field effect tube), which has the advantages of high input impedance of MOSFET and low on-voltage drop of GTR. The driving power is small and the saturation pressure is reduced. The diode is added between the collector and the emitter, mainly for continuous flow, and due to the inductive load, the IGBT turn-off moment will produce a very high self-inductive reverse voltage at both ends of the IGBT, which may breakdown the IGBT. The parallel diode shorted out this "self-inducted inverting voltage", protecting the IGBT.

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