Description
ABB 5SHX2645L0004 3BHL000389P0104 Connect IGCT unit
Intergrated Gate Commutated Thyristors (IGCT) is a new type of power semiconductor device used in large power electronics set, which was developed in 1996. IGCT is a new type of high-power semiconductor switching device based on GTO structure, using integrated gate structure to drive the gate hard, using buffer layer structure and transparent anode emitter technology, which has the on-state characteristics of thyristor and the switching characteristics of transistor. Due to the use of buffer structure and shallow emitter technology, the dynamic loss is reduced by about 50%, in addition, such devices are also integrated on a chip with good dynamic characteristics of the continuous current diode, so that in its unique way to achieve the low on-state voltage drop, high blocking voltage and transistor stable switching characteristics of the organic combination.
IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets. IGCT integrates the GTO chip with the anti-parallel diode and the gate driver circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, giving play to the performance of the thyristor in the on-stage, and presenting the characteristics of the transistor in the off stage. IGCT has the characteristics of high current, high voltage, high switching frequency, high reliability, compact structure, low loss, low cost, high yield, and has a good application prospect. GTO using thyristor technology is a commonly used high-power switching device, which has higher performance in cut-off voltage than IGBT using transistor technology, but the widely used standard GTO drive technology causes uneven on-off and off-off processes, requiring high cost dv/dt and di/dt absorption circuits and high-power gate drive units. As a result, reliability is reduced, the price is higher, and it is not conducive to series.
The advantages of low loss and fast switching of IGCT ensure that it can be used reliably and efficiently in 300kVA ~ 10MVA converters without series or parallel connection. In series, the inverter power can be extended to 100MVA. Although the high power IGBT module has some excellent characteristics, such as active control of di/dt and dv/dt, active clamping, easy to achieve short circuit current protection and active protection. However, due to the defects of high conduction loss, open circuit caused by damage and no long-term reliable operation data, the practical application of high power IGBT module in high power low frequency converter is limited. Therefore, IGCT will become the preferred power device for high power and high voltage inverter.
One year warranty, special discount after sale
The company focuses on DCS, PLC, robot, large servo four systems
The main products are all kinds of module/card, controller, touch screen, servo drive
The company's advantages: the supply of imported original products, professional production of accessories
Fast delivery time, complete supply, The seller has more than $1526000 worth of industrial control products inventory
We Can transport to the world！！！
Company: Guizhou Yuanmiao Automation Equipment Co., LTD
Address: Hongshan Hotel, No.42 Hongshan Lake Road, Beijie Street, Xixiu District, Anshun City, Guizhou Province (Bailing. No. 9, 14th floor, Doubletree by Hilton
① 24-hour email reply (12 hours);
② For shipment to countries outside Asia, please contact the seller.
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