Description
ABB SHY4045L0003 3BHB021400 3BHE019719R0101 GVC736BE101
IGCT integrated Gate Commutated Thyristors (IGCT integrated gate commutated thyristors = gate commutated thyristors + gate units) is a new type of power semiconductor switching device developed by medium voltage inverter for use in large power electronics packages. It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets. IGCT integrates the GTO chip with the anti-parallel diode and gate drive circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, and gives play to the performance of the thyristor in the on-stage, and presents the characteristics of the transistor in the off-stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on, and has a good application prospect. IGCT has been used in power system grid devices (100MVA) and medium power industrial drive devices (5MW) IGCT has been successfully applied in the field of medium voltage inverter for 11 years (until 2009), because the high-speed switching capability of IGCT does not need buffer circuits, so the number of power components required is less, and the reliability of operation is greatly increased.
Insulated Gate Bipolar Transistor (IGBT), It is a composite voltage-driven power electronic device composed of BJT(bipolar triode) and MOS(insulated gate type field effect tube), which has the advantages of high input impedance of MOSFET and low on-voltage drop of GTR. The driving power is small and the saturation pressure is reduced. The diode is added between the collector and the emitter, mainly for continuous flow, and due to the inductive load, the IGBT turn-off moment will produce a very high self-inductive reverse voltage at both ends of the IGBT, which may breakdown the IGBT. The parallel diode shorted out this "self-inducted inverting voltage", protecting the IGBT.
The IGCT combines the high-speed switching characteristics of the IGBT (insulated gate bipolar transistor) with the high blocking voltage and low on-loss characteristics of the GTO (gate off thyristor), and the trigger signal is generally transmitted to the IGCT unit through the optical fiber. In the phase module of the ACS6000 marginal rectifier unit, each phase module consists of an IGCT and a continuing diode, a clamp capacitor, and a damping resistor, and is provided with energy by an independent gate power supply unit GUSP.
IGBT module is only a part of the power device package as a module, IGBT module products can generally be single tube, double tube (half bridge) or 6 tube (full bridge), there are also three levels of 12 just package as a module. Because it has been packaged as a module, it is electrically insulated and the installation process is simple; IGCT does not have this advantage, which makes the design, installation and maintenance of the system complicated, and the contradiction between insulation and heat dissipation makes the system more problematic.
One year warranty, special discount after sale
The company focuses on DCS, PLC, robot, large servo four systems
The main products are all kinds of module/card, controller, touch screen, servo drive
The company's advantages: the supply of imported original products, professional production of accessories
Fast delivery time, complete supply, The seller has more than $1526000 worth of industrial control products inventory
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