GVC736BE101 3BHB021400R0002 | ABB IGCT Integrated Gate Module

Description

ABB GVC736BE101 3BHB021400R0002 | IGCT Integrated Gate Module

IGCT gate circuit contains a large number of IC and resistance capacitors, especially a large number of electrolytic capacitors, in order to provide large turn-off current design, so that it has a certain life limit; Moreover, the capacitor is not replaceable and must be replaced with the entire device, resulting in increased maintenance costs. If the device is faulty, for the IGBT system, generally replace the driver circuit or IGBT, the price is within 1500 yuan, and the conventional voltage IGBT and its driver circuit in the mainland market agents stand many, generally have spot; And for the IGCT composed of the system, must replace the whole IGCT, a replacement is generally more than 20000 yuan, its domestic agents are only a few, due to the occupation of capital, generally no spot, so once the failure, maintenance cycle is long, high cost, and because of the complex devices, the maintenance of technical personnel requirements are very high, After the warranty period is often at the mercy of others. In circuit design, IGBT only needs a small and relatively simple buffer circuit, sometimes even can omit the buffer circuit; In addition to the voltage buffer circuit, IGCT must also have a current buffer circuit, in order to inhibit the secondary breakdown when the shutdown, more complex than IGBT. The current IGBT and IGCT on and off loss are similar, the frequency converter, the efficiency is not different. The main advantage is that the voltage withstand of IGCT is currently higher than that of IGBT, which makes the device less when used in high voltage inverter. But current wind power converters are 690V, IGBT voltage is enough. 4500V/4000A is very common, but now it is slowly caught up with IGBT. IGBT has 4500V/1200A, which can be connected in parallel and is not convenient to be connected in series. The disadvantages of IGCT are that the switching frequency cannot be too high, the waveform is not as good as IGBT, the loss is large, the harmonics are large, and the algorithm is more demanding. The price is expensive. IGCT is widely used in large current situations, such as steel rolling environment, 3300V, tens of thousands of kw power, three-level IGCT inverter (Siemens SM150) to give full play to the best control performance.

1, IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on, and causes low cost, high yield, has a good application prospect.

2. Compared with IGBT, IGCT was put into the market later, and the application was not as wide as IGBT, and the technology maturity was not as good as IGBT. The current IGBT and IGCT on and off loss are similar, the frequency converter, the efficiency is not different. The main advantage is that the voltage withstand of IGCT is currently higher than that of IGBT, which makes the device less when used in high voltage inverter. But current wind power converters are 690V, IGBT voltage is enough. IGBT or IGCT, Which is the development direction of power electronic devices? The academic debate is that although IGCT is late, at least for the time being, it has no apparent advantage over IGBT. But it is also possible that as technology evolves, the two will go hand in hand, or both will be replaced by new devices.

Injection Enhanced Gate Transistor (IEGT) is a series of IGBT power electronic devices with a voltage of over 4KV. By adopting the structure of enhanced gate injection to realize the low-pass voltage, the large-capacity power electronic device is developed dramatically. IEGT has the potential development prospect as the MOS series of power electronic devices. It has the characteristics of low loss, high speed action, high voltage resistance, intelligent active grid drive and so on. As well as the characteristics of channel structure and multi-chip parallel and self-current sharing, it has great potential in further expanding current capacity. In addition, many derivative products can be provided through module packaging, which is expected to be used in large and medium capacity converter applications. Developed by Toshiba in Japan, IEGT utilizes the "electron injection enhancement effect" to provide the benefits of both IGBT and GTO: low saturation voltage drop, wide safe working area (absorption loop capacity is only about 1/10 of the GTO), low grid drive power (two orders of magnitude lower than the GTO), and high operating frequency. The device adopts plate crimp type electrode extraction structure, high reliability, performance has reached 4.5KV/1500A level.

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Company: Guizhou Yuanmiao Automation Equipment Co., LTD

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One year warranty, special discount after sale

The company focuses on DCS, PLC, robot, large servo four systems

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