5SHY3545L0009 GVC750BE101 ABB IGCT Module

Description

ABB 5HY3545L0009 3BHB013085R0001 GVC750BE101

IGCT integrated Gate Commutated Thyristors (Intergrated Gate Commutated Thyristors), which is the integration of the GTO chip with the anti-parallel diode and gate driver circuit, and then the gate driver is connected in a low inductance mode at the periphery. This is the GTO (Gate Turn Off).

IGCT is in the same vein as SCR in the rectification process, SCR is the abbreviation of Silicon Controlled Rectifier. Thyristors have one-way, two-way, turn-off and light control several types. It has the advantages of small size, light weight, high efficiency, long life, easy control, etc., and is widely used in various automatic control and high-power electric energy conversion occasions such as controlled rectification, voltage regulation, inverter and contactless switch.

Unidirectional thyristor is a controlled rectifier electronic component that can be turned off by an external control signal, but once it is turned on, the external signal cannot be turned off, and it can only be turned off by removing the load or reducing the voltage at both ends. Unidirectional thyristor is a four-layer, three-terminal semiconductor device composed of three PN junction PNPN. Compared with the diode with one PN junction, unidirectional thyristor is controlled by the control electrode current. Compared with a triode with two PN junctions, the difference is that the thyristor has no amplification effect on the control electrode current. Bidirectional thyristor has the characteristics of turning on and off in two directions. Bidirectional thyristor is essentially two anti-parallel unidirectional thyristor, which is a semiconductor device composed of four PN structures formed by NPNPN five layers of semiconductors and has three electrodes. Because the structure of the main electrode is symmetrical (all from the N layer), its electrodes are not called anode and cathode like unidirectional thyristors, but the first electrode A1 that is very close to the control is called the second electrode A2. The main disadvantage of bidirectional thyristors is the low ability to withstand the voltage rise rate. This is because when the bidirectional thyristor is switched on in one direction, the carriers in each layer of the silicon wafer have not returned to the position of the cutoff state, and corresponding protection measures must be taken. Bidirectional thyristor components are mainly used in AC control circuits, such as temperature control, light control, explosion-proof AC switches and DC motor speed regulation and commutation circuits. The thyristor is always in the open state above the maintenance current, the turn-off current is high, the control is difficult, and the turn-off speed is slow. In the inverter link, SCR has excellent performance in LCI (load commutated inverter), which can achieve large power, high voltage and large current. Diode (uncontrolled rectifier device) and SCR (semi-controllable) rectifier do not require PMW to meet the two-quadrant inverter work, PWM requires IGBT (full control) and other devices.

Injection Enhanced Gate Transistor (IEGT) is a series of IGBT power electronic devices with a voltage resistance of more than 4KV. By adopting the structure of enhanced injection, the low-pass state voltage is realized, which makes the large-capacity power electronic devices achieve rapid development. IEGT has a potential development prospect as a MOS series power electronic device, with low loss, high-speed action, high voltage, intelligent active gate drive and other characteristics, as well as the use of groove structure and multi-chip parallel and self-balancing characteristics, so it has great potential in further expanding the current capacity. In addition, many derivative products can be provided through module packaging, which is expected in large and medium capacity converter applications. Developed by Toshiba in Japan, IEGT takes advantage of the "electron injection enhancement effect", giving it the advantages of both IGBT and GTO: low saturation voltage drop, wide safe working area (absorption loop capacity is only about 1/10 of the GTO), low gate drive power (two orders of magnitude lower than the GTO), and higher operating frequency. The device adopts plate crimped electrode extraction structure, which has high reliability and performance has reached 4.5KV/1500A level.

One year warranty, special discount after sale

The company focuses on DCS, PLC, robot, large servo four systems

The main products are all kinds of module/card, controller, touch screen, servo drive

The company's advantages: the supply of imported original products, professional production of accessories

Fast delivery time, complete supply, The seller has more than $1526000 worth of industrial control products inventory

We Can transport to the world！！！

Company: Guizhou Yuanmiao Automation Equipment Co., LTD

Address: Hongshan Hotel, No.42 Hongshan Lake Road, Beijie Street, Xixiu District, Anshun City, Guizhou Province (Bailing. No. 9, 14th floor, Doubletree by Hilton 

① 24-hour email reply (12 hours); 

② For shipment to countries outside Asia, please contact the seller.

ABB Related Products

[Disclaimer]

Guizhou Yuanmiao Automation Equipment Co., LTD. We sell new products and discontinued products, independent channels to purchase such special products. Guizhou Yuanmiao Automation Equipment Co., Ltd. is not an authorized distributor, distributor or representative of the featured products on this website. All product names/product images, trademarks, brands and logos used on this website are the property of their respective owners. Descriptions, descriptions or sales of products bearing these names, pictures, trademarks, brands and logos are for identification purposes only and do not imply any association or authorization with any rights holder.

This article is from the official website of Guizhou Yuanmiao Automation Equipment Co., LTD. Please attach this link: http://www.ymdcs.com/