AC10272001R0101 5SHY35L4520 | ABB IGCT Module

Description

ABB AC10272001R0101 5SHY35L4520 | Integrated Gate Module

Intergrated Gate Commutated Thyristors (IGCT) is from from integrating the GTO chip with anti-shunt diode and gate drive circuit, commutated with gate driver externally with low inductance. It is the GTO (Gate Turn Off) of gate integration.

IGCT is derived from SCR in the Rectifier process. SCR is short for Silicon Controlled Rectifier. Thyristor has unidirectional, bidirectional, switchable and optically controlled types. It has the advantages of small size, light weight, high efficiency, long life, easy control, etc., is widely used in controllable rectifier, voltage regulation, inverter and contactless switch and other automatic control and high-power electric energy conversion occasions.

Unidirectional thyristor is a kind of controllable rectifier electronic component, which can be switched from off to on under the action of external control signals. But once it is switched on, the external signal cannot make it off. It can only be turned off by removing the load or reducing the voltage at both ends. Unidirectional thyristor is a four-layer, three-terminal semiconductor device composed of three PN junction PNPN. Compared with the diode with one PN junction, unidirectional thyristor is controlled by the current of the control pole. Compared with the transistor with two PN junction, the difference is that the thyristor does not magnify the current of the control pole. Bidirectional thyristor has the characteristics of turning on and off in two directions. Bidirectional thyristor is essentially two one-way thyristor in inverse parallel. It is a semiconductor device composed of four PNS formed by five layers of NPNPN semiconductor and has three electrodes. Because the structure of the main electrode is symmetrical (both lead from the N layer), its electrodes are not called anode and cathode as one-way thyristor, but the one that is very close to the control is called the first electrode A1, and the other is called the second electrode A2. The main disadvantage of bidirectional thyristor is its low ability to withstand the voltage rise rate. This is because when the bidirectional thyristor is switched on in one direction, the charge carriers in each layer of the silicon wafer have not returned to the cutoff position, and corresponding protection measures must be taken. Bidirectional thyristor is mainly used in AC control circuit, such as temperature control, lighting control, explosion-proof AC switch and DC motor speed control and reversing circuit. Thyristor is always in the open state above the maintenance current, with high turn-off current, difficult control and slow turn-off speed. In the inverter link, SCR has excellent performance in LCI (load commutator inverter), which can achieve super power, high voltage and large current. Diode (uncontrolled rectifier) and SCR (semi-controllable) rectifier do not require PMW to work with two-quadrant converters, while PWM requires devices such as IGBT (full control).

IGCT integrated Gate Commutated Thyristors (Intergrated Gate Commutated Thyristors) is a new type of power semiconductor switching device from medium-voltage converter to commutated thyristors (integrated gate commutator thyristors = gate commutator thyristors + gate unit). It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume of converter device, bringing a new leap to power electronic complete sets of devices. IGCT integrates the GTO chip with the reverse parallel diode and gate drive circuit, and then connects it with the gate driver at the periphery in a low inductance way. It combines the stable turn-off ability of the transistor and the advantages of the low-pass state loss of the thyristor, and gives play to the performance of the thyristor at the turn-off stage and presents the characteristics of the transistor at the turn-off stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on. It also has the advantages of low cost, high yield and good application prospect. Device has been used in electric power system grid (100 mva) and in the power industry drive device IGCT (5 mw) success in the field of medium voltage inverter application for 11 years (until last year), due to the high speed switch IGCT ability without buffer circuit, thus need less number of power device, the operation reliability of greatly increased.

Insulated Gate Bipolar Transistor (IGBT), It is composed of BJT(bipolar triode) and MOS(insulated gate type field effect tube). It has the advantages of high input impedance of MOSFET and low on-off voltage drop of GTR. The driving power is small and the saturation pressure is low. The diode is added between the collector and the emitter, which is mainly used for the continuation of the current. At the same time, due to the inductive load, the IGBT shutdown moment will produce a very high self-inductive reverse voltage at both ends of the IGBT, which may breakdown the IGBT. The parallel diodes short-circuit this "self-inducted inverting voltage", protecting the IGBT.

The IGCT combines the high-speed switching characteristics of the IGBT (insulated gate bipolar transistor) with the high blocking voltage and low on-loss characteristics of the GTO (gate off thyristor). Generally, the trigger signal is transmitted to the IGCT unit through the optical fiber. In the phase module of the ACS6000 marginal rectifier unit, each phase module consists of an IGCT and a continuing diode, a clamp capacitor and a damping resistor, and is powered by an independent gate power supply unit GUSP.

Common IGBT parameters: 6500V/ Maximum 750A; 4500V/ 1200A;  3300V/ 1500A;  1700V/3600A;  1200V/ 3600A. 700V and 2500V are rarely used. A lot of them are below 600V, but I won't talk about them here. Above 380V, IGBT voltage should be above 1200V. Although there are 6600 and 6000V motors, 6500V IGBT is not suitable for the high price of 6500V, a 20,000, and two-level output voltage of 3300V, the maximum is only 750A pipe, the output of dv/dt is too large, three-level output voltage of 4160V, 4160 in the domestic application is few. And a 4500V pipe with five levels can output 6600V, so the 6500 tube is not used.

                                                                AC10272001R0101 5SHY35L4520

                                                                AC10272001R0101 5SHY35L4520

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