Description

ABB GVC703AE01 5SHX08F4502

IGBT(insulated gate bipolar transistor) is a compound fully controlled voltage-driven power semiconductor device composed of BJT(bipolar junction transistor) and MOS(insulated gate field effect tube), which has the characteristics of self-turn-off. Simply put, it is an on-off switch, IGBT has no function of amplifying voltage, it can be seen as a wire when it is on, and it is open when it is off. IGBT combines the advantages of both BJT and MOSFET devices, such as low drive power and low saturation voltage.

IGBT module is a modular semiconductor product made of IGBT and FWD (continuous current diode chip) through a specific circuit bridge package, which has the characteristics of energy saving, easy installation and maintenance, and stable heat dissipation.

IGBT is the core device of energy conversion and transmission, and is the "CPU" of power electronic devices. Using IGBT for power conversion can improve the efficiency and quality of power consumption, and has the characteristics of high efficiency, energy saving and green environmental protection. It is a key supporting technology to solve the problem of energy shortage and reduce carbon emissions.

IGBT is a Darlington composite device with GTR as the leading component and MOSFET as the driving component. There are three electrodes on the outside, which are G-gate, C-collector and E-emitter.

In the process of using IGBT, the on/off/block state of IGBT can be controlled by controlling the size of its collector-emitter voltage UCE and gate-emitter voltage UGE.

1) When the IGBT gate-emitter is plus 0 or negative voltage, the channel in the MOSFET disappears and the IGBT is turned off.

2) When the collector-emitter voltage UCE < 0, the PN junction of J3 is in reverse bias, and the IGBT is in reverse block state.

3) When the collector-emitter voltage UCE > 0, there are two cases:

② If the gate-emitter voltage UGE < Uth, the channel cannot be formed and the IGBT is in a positive blocking state.

② If the gate-emitter voltage UGE > Uth, the gate channel is formed, and the IGBT is in the on-state (normal operation). At this time, holes are injected from the P+ region into the N base region for conductance modulation, and the value of resistance RN in the N base region is reduced, so that the on-state voltage drop of IGBT is reduced.

Structurally speaking, IGBT has three main directions of development:

1) IGBT longitudinal structure: non-transparent collector NPT type, PT type with buffer layer, transparent collector NPT type and FS field cutoff type;

2) IGBT grid structure: plane grid mechanism, Trench trench structure;

3) Silicon wafer processing technology: epitaxial growth technology, zone melting silicon single crystal;

Its development trend is: ① reduce the loss ② reduce the production cost

Total power consumption = on-state loss (related to saturation voltage VCEsat)+ switching loss (Eoff Eon). In the same generation of technology, on-state loss and switching loss are contradictory and mutually increasing.

The main application areas of IGBT

As the mainstream of new power semiconductor devices, IGBT has been widely used in industrial, 4C(communications, computers, consumer electronics, automotive electronics), aerospace, national defense and other traditional industrial fields, as well as rail transit, new energy, smart grid, new energy vehicles and other strategic emerging industries.

One year warranty, special discount after sale

The company focuses on DCS, PLC, robot, large servo four systems

The main products are all kinds of module/card, controller, touch screen, servo drive

The company's advantages: the supply of imported original products, professional production of accessories

Fast delivery time, complete supply, The seller has more than $1526000 worth of industrial control products inventory

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